A Si-Ge HBT technology for the wireless marketplace

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 453-460

  Ahlgren, D C ^a   Sunderland, D A ^a   Gilbert, M M ^a   Greenberg, D R ^a   Jeng, S J ^a   Malinowski, J C ^a   Nguyen Ngoc, D ^a   Stein, K J ^a   Harame, D L ^a   Meyerson, B ^b  

^a IBM MICROELECTRONICS   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HBT TECHNOLOGY;

EID: 0347398757     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. D. L. Harame, et al., 'Si/SiGe Epitaxial-Base Transistors, Parts I and IF IEEE Trans. Electron Devices, 42,455, 1995.
2. E. J. Prinz and J. C. Sturm, 'Analytical Modeling of Current Gain - Early Voltage Products in Si/SiGe', IEDM Tech. Dig., 853,1991.
3. J. D. Cressler, et al., 'On the Profile Design and Optimization of Epitaxial Si and SiGe Base Bipolar Technology for 77 K Applications', IEEE Trans. Electron Devices, 40, 525,1993.
4. D. L. Harame, et al, 'Optimization of SiGe HBT Technology for High Speed Analog and Mixed-Signal Applications', IEDM Tech. Dig., 874, 1993.
5. S. S. Iyer, et al., 'Silicon Germanium Base Heterojunction Bipolar Transistors by Molecular Beam Epitaxy', Appl. Phys. Lett, 52,486,1988.
6. C. A. King, et al., 'Si/SWGex Heterojunction Bipolar Transistors Produced by Limited Reaction Processing', IEEE Electron Device Lett., 10, 52, 1989.
7. T. O. Sedgwick, et al, 'Characterization of Devices Fabricated in Films at Low Temperature by Atmospheric Pressure CVD', IEDM Tech. Dig., 451, 1991.
8. B. S. Meyerson, Appl. Phys. Lett., 'Low-Temperature Silicon Epitaxy by Ultra-High Vacuum/Chemical Vapor Deposition',48, 797, 1986.
9. D. L. Harame, et al., IEDM Tech. Dig., 'A 200mm SiGe-HBT Technology for Wireless and Mixed Signal Applications', 437,1994.
10. L. Larson, et al, 'Si/SiGe HBT Technology for Low-Cost Monolithic Microwave Integrated Circuits', ISSCC Dig. of Tech. Papers, 80, 1996.
11. D. Nguen-Ngoc, et al, 'A 200 mm SiGe-HBT BiCMOS Technology for Mixed Signal Applications', BCTM Proceedings, 89, 1995.
12. D. L. Harame, et al, 'SiGe HBT Technology: Device and Application Issues', IEDM Tech. Dig., 731,1995.
13. E. Crabbe, et al, IEDM Tech. Dig., 'Sub-30ps ECL Circuits Using high-ft Si and SiGe Epitaxial Base SEEW Transistors', 83,1993.
14. J. Long, et al., 'RF Analog and Digital Circuits in SiGe Technology', ISSCC Dig. of Tech. Papers, 82,1996.
15. M. Case, et al., 'A 23 GHz Static 1/128 Frequency Divider Implemented in a Manufacturable SiGe Epitaxial Base Heterojunction Bipolar Technology', BCTM Proceedings, ' 121, 1995.
16. W. Gao, et al., 'A 5-GHz SiGe HBT Return-to-Zero Comparator', BCTM Proceedings, 166, 1995.