Suppression of the base-collector leakage current in integrated Si/SiGe heterojunction bipolar transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1740-1744

  Assous, M ^a,b   De Berranger, E ^a,b   Regolini, J L ^a,b   Mouis, M ^a,b   Hernandez, C ^a  

^a ORANGE LABS   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342591051     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590046     Document Type: Article

References (5)

1. F. Sato, T. Tatsumi, T. Hashimoto, and T. Tashiro, IEEE Trans. Electron Devices 41, 1373 (1994).
2. F. Sato, T. Hashimoto, T. Tatsumi, and T. Tashiro, IEEE Trans. Electron Devices 42, 483 (1995).
3. E. de Berranger, S. Bodnar, A. Chantre, J. Kirtsch, A. Monroy, M. Laurens, A. Granier, J.-L. Regolini, and M. Mouis, Proceedings of ESSDERC 96 (Editions Frontières, Paris, 1996), pp. 433-436.
4. S. Bodnar, C. Morin, and J.-L. Regolini, Thin Solid Films 294, 11 (1997).
5. S. Denorme, D. Mathiot, P. Dollfus, and M. Mouis, IEEE Trans. Electron Devices 42, 523 (1995).