40Gbit/s transimpedance amplifier in SiGe bipolar technology for the receiver in opticalfibre TDM links

Electronics Letters

Volumn 34, Issue 5, 1998, Pages 452-453

  Mullrich J ^a   Meister, T F ^b   Rest, M ^b   Bogner, W ^b   Schopflin A ^b   Rein, H M ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; OPTICAL LINKS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; TIME DIVISION MULTIPLEXING;

TRANSIMPEDANCE AMPLIFIERS;

FIBER LASERS;

EID: 0032485145     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980268     Document Type: Article

References (7)

1. BOGNER, W., GOTTWALD, E., SCHÖPFLIN, A., and WEISKE. C-J.: '40Gbit/s unrepeatered optical transmission over 148km by electrical time division multiplexing and demultiplexing', Electron. Lett., 1997, 33, (25), pp. 2136-2167
2. REIN, H.-M., GOTTWALD, E., and MEISTER. T.F.: 'Si-bipolar - A potential candidate for high-speed electronics in 20 and 40Gb/s TDM systems?'. Tech. Dig. Spring Topical Meetings, Ultrafast Electron. and Optoelectron., Incline Village, Nevada, USA, March 1997, pp. 118-120
3. REIN, H.-M.: 'Si and SiGe bipolar ICs for 10 to 40Gbit/s optical-fiber TDM links'. Int. J. High Speed Electronics and Systems, 1998, (Special issue on high speed circuits for lightwave communications (invited))
4. SCHMID, R., MEISTER, T.F., NEUHÄUSER, M., FELDER, A., BOGNER, W., REST, M., RUPETER, J., and REIN, H.-M.: '20Gbit/s transimpedance preamplifier and modulator driver in SiGe-bipolar technology', Electron. Lett., 1997, 33, pp. 1136-1137
5. NEUHÄUSER, M., REIN, H.-M., and WERNZ, H.: 'Low-noise, high-gain Si-bipolar preamplifiers for 10Gb/s optical-fibre links - design and realization', IEEE J. Solid-Stale Circuits, 1996, 31, pp. 24-29
6. REIN. H.-M., and MöLLER, M.: 'Design considerations for very-high-speed Si-bipolar ICs operating up to 50Gb/s', IEEE J. Solid-State Circuits, 1996, 8, pp. 1076-1090
7. max and 11 ps gate delay'. Proc. IEDM 1995, Washington, 1995, pp. 739-742