CMOS production compatible sige heteroepitaxy for high frequency circuits

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 424-427

  Ritter, G ^a   Bolze, D ^a   Fischer, G ^a   Knoll, D ^a   Schley, P ^a   Tillack, B ^a   Wolansky, D ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GERMANIUM;

CMOS TECHNOLOGY; EPITAXIAL TECHNIQUES; GE CONTENT; HIGH FREQUENCY CIRCUITS; HIGH FREQUENCY DEVICES; PROCESS CAPABILITY INDICES; PROCESSING STEPS; SI-GE HETEROEPITAXY;

EPITAXIAL GROWTH;

EID: 84907542519     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194456     Document Type: Conference Paper

References (7)

1. E. Crabbe et al., IEDM Tech. Dig., pp. 83-86, 1993.
2. A. Schppen et al. IEDM Tech. Dig., pp743-746, 1995.
3. D. L. Harame et al., IEDM Tech. Dig., pp. 19-22, 1992.
4. D. C. Ahlgren et al., IEDM Tech. Dig., pp. 859-862, 1996.
5. See, E. G., G. Ritter et al., MRS Symp. Proc., Vol. 387, pp. 341-346, 1995.
6. P. Zaumseil, Cryst. Res. Technol. 31(4), pp. 529-537, 1996.
7. See, e. g., ed. R. Bowman et al., Advanced VLSI Fabrication (ICE, 1995), pp. 1017-1022.