Performance improvement in a 200 mm BiCMOS technology by Si/SiGe heterojuncton bipolar transistor integration

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 433-436

  De Berranger, E ^a,b   Bodnar, S ^a   Chantre, A ^a   Kirtsch, J ^a   Monroy, A ^a   Laurens, M ^a   Granier, A ^a   Regolini, J L ^a   Mouis, M ^a,b  

^a ORANGE LABS   (France)

^b Laboratoire de Physique de la Matière CNRS UMR C5511 Bat 502   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SI/SIGE;

EID: 84920747735     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Crabbe et al., IEEE Transactions on electron devices, Vol. 40, No. 11,1993
2. Kasper et al., J. Journ. of Apllied Phys., Vol. 33, Part. 1, No. 4B, 1994
3. Granier et al., IEEE-MTT Symposium, 1995
4. Regolini et al., Electronic Materials and Processing, Yokohama, Japan, 1995