Design of RF integrated circuits using SiGe bipolar technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1997, Pages 51-56

  Goetzfried, Rainer ^a   Beisswanger, Frank ^a   Gerlach, Stephan ^a  

^a TEMIC Telefunken Microelectronic GmbH ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SWITCHES; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; POWER AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS;

BIPOLAR JUNCTION TRANSISTORS (BJT); RADIOFREQUENCY (RF) INTEGRATED CIRCUITS;

BIPOLAR INTEGRATED CIRCUITS;

EID: 0031339257     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)