MBE-grown SiGe base HBT with polysilicon-emitter and TiSi2 base Ohmic layer

Solid-State Electronics

Volumn 39, Issue 11, 1996, Pages 1643-1648

  Ryum, B R ^a   Han, T H ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ELECTRIC BREAKDOWN OF SOLIDS; EPITAXIAL GROWTH; ETCHING; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS;

POLYSILICON EMITTER; TITANIUM DISILICIDE BASE OHMIC LAYER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030290944     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00087-1     Document Type: Article

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