APCVD-grown self-aligned SiGe-base HBTs

Proceedings of the 1993 Bipolar/Bicoms Circuits and Technology

Volumn , Issue , 1993, Pages 55-62

  Burghartz, J N ^a   Sedgwick, T O ^a   Grutzmacher, D A ^a   Nguyen Ngoc, D ^a   Jenkins, K A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; ELECTRIC NETWORK PARAMETERS; EPITAXIAL GROWTH; GATES (TRANSISTOR); SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSISTORS;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION;

BIPOLAR TRANSISTORS;

EID: 0027841890     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/bipol.1993.617469     Document Type: Conference Paper

References (45)