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Volumn 33, Issue 12, 1997, Pages 1089-1090

Low power consumption and low phase noise 2.4GHz VCO using SiGe HBT for WLL application

Author keywords

Heterojunction bipolar transistors; Silicongermanium; Voltage controlled oscillators

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC INDUCTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROSTRIP LINES; RESONATORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE; VARACTORS;

EID: 0031554341     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970731     Document Type: Article
Times cited : (4)

References (7)
  • 2
    • 3242843677 scopus 로고
    • Low-frequency noise and microwave noise parameters in Si/SiGe heterojunction bipolar transistors
    • PLANA, R., KIBBEL, H., GRUHLE, A., ESCOTTE, L., ROUX, J.P., and GRAFFEUIL, J.: 'Low-frequency noise and microwave noise parameters in Si/SiGe heterojunction bipolar transistors'. Proc. ESSDERC, 1993, pp. 51-54
    • (1993) Proc. ESSDERC , pp. 51-54
    • Plana, R.1    Kibbel, H.2    Gruhle, A.3    Escotte, L.4    Roux, J.P.5    Graffeuil, J.6
  • 3
    • 0029232434 scopus 로고
    • Investigation of the high frequency noise figure reduction of SiGe heterojunction bipolar transistors using actualized physical models
    • DECOUTERE, S., POORTMANS, J., DEFERM, L., and NIJS, J.: 'Investigation of the high frequency noise figure reduction of SiGe heterojunction bipolar transistors using actualized physical models', Solid-State Electron., 1995, 38, pp. 157-162
    • (1995) Solid-State Electron. , vol.38 , pp. 157-162
    • Decoutere, S.1    Poortmans, J.2    Deferm, L.3    Nijs, J.4
  • 5
    • 0029490101 scopus 로고
    • Monolithic 26 GHz and 40 GHz VCOs with SiGe heterojunction bipolar transistors
    • GRUHLE, A., SCHUPPEN, A., KÖNIG, U., ERBEN, U., and SCHUMACHER, H.: 'Monolithic 26 GHz and 40 GHz VCOs with SiGe heterojunction bipolar transistors'. Tech. Dig IEDM, 1995, pp. 725-728
    • (1995) Tech. Dig IEDM , pp. 725-728
    • Gruhle, A.1    Schuppen, A.2    König, U.3    Erben, U.4    Schumacher, H.5
  • 7
    • 3142558501 scopus 로고
    • Atmospheric pressure CVD-grown SiGe base, polysilicon-emitter heterojunction bipolar transistors
    • RYUM, B.R., and HAN, T.H.: 'Atmospheric pressure CVD-grown SiGe base, polysilicon-emitter heterojunction bipolar transistors'. Proc. ESSDERC, 1995, pp. 505-508
    • (1995) Proc. ESSDERC , pp. 505-508
    • Ryum, B.R.1    Han, T.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.