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1
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85069426066
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For a recent review, see Polycrystalline Semiconductors, Vol. 57 of Springer Series in Solid-State Sciences, edited by G. Harbeke (Springer, Berlin, 1985).
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2
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85069420818
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A. Bourret, in Polycrystalline Semiconductors, Ref. 1.
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4
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85069419774
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H. J. Möller and H. H. Singer, in Polycrystalline Semiconductors, Ref. 1;
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19
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85069419724
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J. Werner, Ph.D. thesis, University of Stuttgart, 1983;
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20
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85069425888
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and in Polycrystalline Semiconductors, Ref. 1.
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22
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85069423600
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G. Blatter and F. Greuter, in Polycrystalline Semiconductors, Ref. 1.
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29
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0022328174
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edited by, W. M. Johnson, S. G. Bishop, G. D. Watkins, North-Holland, Amsterdam
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(1985)
Microscopic Identification of Electronic Defects in Semiconductors, Materials Research Society Symposia Proceedings
, vol.46
, pp. 409
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Pike, G.E.1
Seager, C.H.2
Dosch, R.G.3
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31
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85069421577
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and unpublished.
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32
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0010847647
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. The result applies to a thermionic emission model for the electron transport but a diffusion limited approach leads to a similar result. (b), 30, 3274, G. E. Pike, Phys. Rev. B
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(1961)
J. Appl. Phys.
, vol.32
, pp. 635
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Mueller, R.K.1
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40
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85069420902
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Landolt-Börnstein, edited by O. Madelung (Springer, Berlin, 1982), Vol. 176, and references therein.
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63
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85069423910
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For practical calculations the denominator 2+ g ^ in lambda is substituted by 2 ( g ^ << 1).
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64
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85069424863
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As a further stabilization mechanism the band-band recombination within the depletion region has been considered, however with no convincing success.
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65
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85069426570
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A time-dependent quantity u(t) is approximated to first order by u0 + u ̃^exp (i ω t). Only the expansion of Φb is defined with a minus sign, Φb (t)= Φb0 - Φ ̃b exp (i ω t).
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66
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85069424383
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The ``decoration'' of g is straightforward: g0 = g(V0 + Φb0 ), g0c =g0 (1- c ^0 )/ c ^0, g ^0 =g0 c ^h0, g ^0c = g ^0 (1- c ^0 )/ c ^0.
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67
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85069426525
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If the electronic DOS at the interface is not bounded from above (e.g., a broad rectangular DOS) the capacitance remains at its large value. With increasing bias the hole dynamics become dominant, however, and the capacitance turns abruptly to negative values. The filling of the electron DOS is therefore not a prerequisite for a negative capacitance.
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