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Applied Physics Letters

Volumn 58, Issue 2, 1991, Pages 155-157

Admittance of Al/GaAs Schottky contacts under forward bias as a function of interface preparation conditions

(4) Muret, P a Elguennouni, D a Missous, M b Rhoderick, E H b

a CNRS (France)

b UNIVERSITY OF MANCHESTER (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002956489 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.104958 Document Type: Article

Times cited : (17)

References (19)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.