Backgate-Induced Characteristics of Ion-Implanted GaAs MESFET's

IEEE Transactions on Electron Devices

Volumn 34, Issue 6, 1987, Pages 1245-1252

  Fu, Shih Tsang ^a   Das, Mukunda B ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - ION IMPLANTATION;

BACKGATING PHENOMENON; GALLIUM ARSENIDE MESFET;

SEMICONDUCTOR DEVICES, FIELD EFFECT;

EID: 0023363386     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23077     Document Type: Article

References (15)

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