Negative capacitance of silicon diode with deep level traps

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 19, Issue 7, 1980, Pages 1423-1424

  Noguchi, Takashi ^a   Kitagawa, Masanao ^a   Taniguchi, Ichiro ^a  

^a DOSHISHA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038025442     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.19.1423     Document Type: Article

References (3)

1. A. Ushirogawa: J. Inst. Electron. & Commun. Eng. Jpn. 44 (1961) 212.
2. A.S., Grove, Physics and Technology of Semiconductor Devices, (John Wiley & Sons, Inc., 1967) Cha, 6
3. W. G. Oldham and S. S. Naik: Solid-State Electron. 15 (1972) 1085.