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May
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J. A. Robinson, Y. A. El-Mansy, and A. R. Boothroyd, “A general four-terminal charging-current model for the insulated-gate field-effect transistor-I,” Solid-State Electron., vol. 23, no. 5, pp. 405–410, May 1980.
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The calculation of small signal parameters and sensitivities from the spatial analysis of semiconductor devices
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Boole Press Limited, Dublin, Ireland
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M. van der Woude, “The calculation of small signal parameters and sensitivities from the spatial analysis of semiconductor devices,’ in Proc. First Int. Conf. on the Numerical Analysis of Semiconductor Devices (NASECODE I), Boole Press Limited, Dublin, Ireland, pp. 296–298, 1979.
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Boston, MA, Nov. 2–4
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S. E. Laux, “Extraction of quasi-static capacitance from numerical device simulation data,” presented at the Joint SIAM-IEEE Conf. Numerical Simulation of VLSI Devices, Boston, MA, Nov. 2–4, 1982.
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J. L. D’Arcy, E. J. Prendergast, and P. Lloyd, “Modeling of bipolar device structures—physical simulation,” in IEDM Tech. Dig., pp. 516–519, 519, Dec. 1981.
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Cambridge, MA, Jan.
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J. L. D’Arcy, G. T. Pearman, E. J. Prendergast, and P. Lloyd, “Physical simulation of bipolar device structures,” in Proc. Conf. on Advanced Research in VLSI, Cambridge, MA, pp. 188–200, Jan. 1982.
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Calculation of quasi-static device behavior with small computational burden
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Boole Press Limited, Dublin, Ireland
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S. E. Laux, “Calculation of quasi-static device behavior with small computational burden,” in Proc. Third Int. Conf. on the Numerical Analysis of Semiconductor Devices and Integrataed Circuits (NASE-CODE CODE III), Boole Press Limited, Dublin, Ireland, pp. 161–166, 1983.
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June
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J. Machek and W. Fulop, “Harmonic distortion in a one-dimensional p-n-p transistor,” Solid-State Electron., vol. 26, no. 6, pp. 525–536, June 1983.
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D. E. Ward, “Charge-based modeling of capacitance in MOS transistors,” Ph.D. Dissertation, Stanford Univ., Stanford, CA, June 1981.
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B. M. Grossman and M. J. Hargrove, “Numerical solution of the semiconductor transport equations with current boundary conditions,” IEEE Trans. Electron Devices, vol. ED-30, no. 9, pp. 1092–1096, 1096, Sept. 1983.
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