Small-signal performance of a quantum well diode

IEEE Transactions on Electron Devices

Volumn 43, Issue 3, 1996, Pages 467-472

  Ershov, Maxim ^a   Ryzhii, Victor ^a   Saito, Kazuyuki ^a  

^a UNIVERSITY OF AIZU   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC IMPEDANCE; ELECTRON TRANSPORT PROPERTIES; FREQUENCIES; GEOMETRY; NUMERICAL ANALYSIS; PERFORMANCE; RESONANCE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SIGNAL PROCESSING; TEMPERATURE;

COLLECTOR BARRIER; EMITTER BARRIER; FREQUENCY DEPENDENCE; GEOMETRIC CAPACITANCE; QUANTUM WELL DIODE;

SEMICONDUCTOR DIODES;

EID: 0030107777     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485662     Document Type: Article

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