Origin of the Excess Capacitance at Intimate Schottky Contacts

Physical Review Letters

Volumn 60, Issue 1, 1988, Pages 53-56

  Werner, J ^a   Levi, A F J ^b   Tung, R T ^b   Anzlowar, M ^b   Pinto, M ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002713076     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.60.53     Document Type: Article

References (18)

1. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors