Correlation between current-voltage and capacitance-voltage characteristics of schottky barrier diodes

IEEE Transactions on Electron Devices

Volumn 45, Issue 9, 1998, Pages 2032-2036

  Zhu, Yu ^a   Ishimaru, Yoshiteru ^a   Takahashi, Naoki ^a   Shimizu, Masafumi ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; EPITAXIAL GROWTH; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

CAPACITANCE VOLTAGE CHARACTERISTICS; CAPACITANCE VOLTAGE MEASUREMENT; CURRENT VOLTAGE MEASUREMENT; METAL SEMICONDUCTOR DEVICES;

SCHOTTKY BARRIER DIODES;

EID: 0032164483     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711371     Document Type: Article

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