On the barrier lowering and ideality factor of ideal Al/GaAs Schottky diodes

Solid State Electronics

Volumn 34, Issue 10, 1991, Pages 1077-1081

  Mui, D ^a   Strite, S ^a   Morkoc H ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES;

BARRIER LOWERING; IDEALITY FACTOR; SCHOTTKY DIODES;

SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

EID: 0026238340     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(91)90103-6     Document Type: Article

References (12)