Al composition dependence of Schottky barrier heights and conduction band offsets of AlxIn1-xP/Ga0.47In0.53As on InP

Journal of Applied Physics

Volumn 80, Issue 3, 1996, Pages 1617-1622

  Zhu, Yu ^a   Ishimaru, Yoshiteru ^a   Takahashi, Naoki ^a   Shimizu, Masafumi ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CALCULATIONS; COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; ELLIPSOMETRY; REFRACTIVE INDEX; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THICKNESS MEASUREMENT; X RAY CRYSTALLOGRAPHY;

ALUMINUM INDIUM PHOSPHIDE; CAPACITANCE VOLTAGE CHARACTERISTICS; CONDUCTION BAND OFFSETS; GALLIUM INDIUM ARSENIDE; INFRARED ELLIPSOMETRY; SCHOTTKY BARRIER HEIGHTS;

HETEROJUNCTIONS;

EID: 0030212849     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362960     Document Type: Article

References (35)

1. U. K. Mishra, A. S. Brown, S. E. Rosenbaum, C. E. Hooper, M. W. Pierce, M. J. Delaney, S. Vaughn, and K. White, IEEE Electron Device Letter. EDL-9, 647 (1988).
2. T. Futatsugi, Y. Yamaguchi, S. Muto, N. Yokoyama, and A. Shibatomi, J. Appl. Phys. 65, 1771 (1989).
3. A. V. Räisänen, T. J. Tolmunen, M. Natzic, M. A. Frerking, E. Brown, H. Grönqvist, and S. M. Nilsen, IEEE Trans. Microwave Theory Tech. 43, 685 (1995).
4. C. Chu, Y. Chan, R. Yuang, J. Chyi, and C. Lee, Electron. Lett. 31, 1692 (1995).
5. J. R. Waldrop, E. A. Kraut, C. W. Farley, and R. W. Grant, J. Appl. Phys. 69, 372 (1991).
6. J. Böhrer, A. Krost, T. Wolf, and D. Bimberg, Phys. Rev. B 47, 6439 (1993).
7. Y. Umemoto, W. J. Schaff, H. Park, and L. F. Eastman, Appl. Phys. Lett. 62, 1964 (1993).
8. W. Gao, P. R. Berger, R. G. Hunsperger, G. Zydzik, W. W. Rhodes, H. M. O'Bryan, D. Sivco, and A. Y. Cho, Appl. Phys. Lett. 66, 3471 (1995).
9. P. Kordos, M. Marso, R. Meyer, and H. Lüth, J. Appl. Phys. 72, 2347 (1992).
10. S. Fujita, T. Noda, C. Nozaki, and Y. Ashizawa, IEEE Electron Device Lett. 14, 259 (1993).
11. K. B. Chongh, C. Caneau, W.-P. Hong, and J.-I. Song, Appl. Phys. Lett. 64, 211 (1994).
12. K. B. Chongh, C. Caneau, W.-P. Hong, and J.-I. Song, IEEE Electron Device Lett. 15, 33 (1994).
13. L. M. Jelloian, M. Matloubian, T. Liu, M. Liu, and M. A. Thompson, IEEE Electron Device Lett. 15, 172 (1994).
14. P. T. Chan, H. S. Choy, C. Shu, and C. C. Hsu, Appl. Phys. Lett. 67, 1715 (1995).
15. C. C. Tin, P. A. Barnes, J. R. Williams, C. S. Patuwathavithane, and P. K. Staagen, J. Appl. Phys. 66, 4201 (1989).
16. M. Amiotti and G. Landgren, J. Appl. Phys. 73, 2965 (1993).
17. H. Burkhard, H. W. Dinges, and E. Kuphal, J. Appl. Phys. 53, 655 (1982).
18. H. W. Dinges, H. Burkhard, R. Lösch, H. Nickel, and W. Schlapp, Appl. Surf. Sci. 54, 477 (1992).
19. A. Onton and R. J. Chicotka, J. Appl. Phys. 41, 4205 (1970).
20. H. Asai and K. Oe, J. Appl. Phys. 54, 2052 (1983).
21. C. P. Kuo, S. K. Vong, R. M. Cohen, and G. B. Stringfellow, J. Appl. Phys. 57, 5428 (1985).
22. R. K. Willardson, Semiconductors and Semimetals (Academic, New York, 1975), Vol. 10.
23. Y. C. Chen and P. K. Bhattacharya, J. Appl. Phys. 73, 7389 (1993).
24. B. R. Bennett and J. A. del Alamo, J. Appl. Phys. 73, 8304 (1993).
25. E. Bugiel and P. Zaumseil, Appl. Phys. Lett. 62, 2051 (1993).
26. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
27. S. Adachi, H. Kato, A. Moki, and K. Ohtsuka, J. Appl. Phys. 75, 478 (1994)
28. M. Moser, R. Winterhoff, C. Geng, I. Queisser, F. Scholz, and A. Dörnen, Appl. Phys. Lett. 64, 235 (1994).
29. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
30. F. A. Padovani and R. Stratton, Solid State Electron. 9, 695 (1966).
31. T. J. Miller and M. I. Nathan, Appl. Phys. Lett. 61, 2332 (1992).
32. Z. Q. Shi, R. L. Wallace, and W. A. Anderson, Appl. Phys. Lett. 59, 446 (1991).
33. S. Tiwari and D. J. Frank, Appl. Phys. Lett. 60, 630 (1992).
34. P. Revva, J. M. Langer, M. Missous, and A. R. Peaker, J. Appl. Phys. 74, 416 (1993).
35. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984).