Nearly Ideal Unguarded Vanadium-Silicide Schottky-Barrier Diodes

IEEE Transactions on Electron Devices

Volumn 33, Issue 9, 1986, Pages 1294-1298

  Drobny, Vladimir F ^a  

^a TEKTRONIX INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; INTEGRATED CIRCUITS, VLSI - RESEARCH; SEMICONDUCTOR DIODES - RESEARCH; VANADIUM SILICON ALLOYS;

BIPOLAR INTEGRATED CIRCUITS; DIODE QUALITY FACTOR; ELECTRIC-FIELD ENHANCEMENT; REVERSE-CURRENT LEAKAGE; SCHOTTKY-BARRIER DIODES;

SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

EID: 0022783950     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22661     Document Type: Article

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