A Behavioral Circuit Simulation Model for High-Power GaAs Schottky Diodes

IEEE Transactions on Electron Devices

Volumn 42, Issue 10, 1995, Pages 1847-1854

  Pendharkar, Sameer P ^a   Winterhalter, Craig R ^a   Shenai, Krishna ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CIRCUIT THEORY; COMPUTER SIMULATION; ELECTRIC NETWORK TOPOLOGY; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SWITCHING;

CIRCUIT SIMULATION MODEL; HIGH POWER SCHOTTKY DIODES; NONLINEAR DIODE RESISTANCE; PARAMETER EXTRACTION; TRANSIENT SWITCHING CONDITIONS;

SCHOTTKY BARRIER DIODES;

EID: 0029391695     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.464410     Document Type: Letter

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