Analysis of I-V measurements on CrSi2Si Schottky structures in a wide temperature range

Solid State Electronics

Volumn 36, Issue 7, 1993, Pages 969-974

  Barus, Miroslav ^a   Donoval, Daniel ^a  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR METAL BOUNDARIES;

SCHOTTKY BARRIER HEIGHT; THERMIONIC EMISSION; TUNNELING CURRENT;

SCHOTTKY BARRIER DIODES;

EID: 0027625627     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(93)90112-4     Document Type: Article

References (14)

1. Modeling and characterization of dopant redistributions in metal and silicide contacts
2. Domination of the thermionic-field emission in the reverse I-V characteristics of n-type GaAs Schottky contacts