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Journal of Applied Physics

Volumn 76, Issue 4, 1994, Pages 2336-2342

Reverse I-V and C-V characteristics of Schottky barrier type diodes on Zn doped InP epilayers grown by metalorganic vapor phase epitaxy

(3) Singh, A a Cova, P a Masut, R A b

a UNIVERSIDAD DE ORIENTE (Venezuela)

b ÉCOLE POLYTECHNIQUE DE MONTRÉAL (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449000611 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.357611 Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.