Characterization of a defect layer at a Schottky barrier interface by current and capacitance measurements

Solid State Electronics

Volumn 36, Issue 5, 1993, Pages 785-789

  Cola, A ^a   Lupo, M G ^a   Vasanelli, L ^a   Valentini, A ^a  

^a INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC VARIABLES MEASUREMENT; SEMICONDUCTOR METAL BOUNDARIES; SPUTTER DEPOSITION;

DLTS MEASUREMENTS; SCHOTTKY BARRIER INTERFACE;

SCHOTTKY BARRIER DIODES;

EID: 0027589578     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(93)90250-T     Document Type: Article

References (23)

1. Quality dependence of Pt–n-GaAs Schottky diodes on the defects introduced during electron beam deposition of Pt
2. Are interface states consistent with Schottky barrier measurements?
3. Characterization of a Layer of Defects Located Near the Interface of a Schottky Diode