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Applied Physics Letters
Volumn 62, Issue 16, 1993, Pages 1964-1966
Effect of thermionic-field emission on effective barrier height lowering in In0.52Al0.48As Schottky diodes
(4)
Umemoto, Yasunari
a
Schaff, William J
a
Park, Hyunchang
a
Eastman, Lester F
a
a
Phillips Hall
*
(
United States
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
3743132765
PISSN
:
00036951
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.109638
Document Type
:
Article
Times cited : (
12
)
References (
11
)
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5
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6
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4
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7
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8
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4
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5
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6
4
0026622832
(IEEE, New York)
(1991)
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1
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4
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4
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5
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(1991)
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, pp. 524
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1
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2
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1
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1
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2
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3
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4
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5
10
0005688480
edited by O. Man-delung (Springer, Berlin), Group III
(1987)
Landolt-Bornstein Seriesr Semiconductors: Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds
, vol.22-a
11
0014849493
(1970)
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, vol.25
, pp. 756
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3
* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
