An Analytical Model for High Electron Mobility Transistors

IEEE Transactions on Electron Devices

Volumn 41, Issue 6, 1994, Pages 874-878

  Ahn, Hyungkeun ^a   Nokali, Mahmoud El ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

CHANNEL LENGTH MODULATION; ELECTRON CONCENTRATIONS; MOBILITY DEGRADATION; SATURATION REGION; SERIES RESISTANCE; TRANSCONDUCTANCE; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028448049     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.293295     Document Type: Article

References (11)

1. C. Z. Cil and S. Tansal, “A new model for modulation doped FETs,” IEEE Electron Device Lett., vol. EDL-6, pp. 434-436, 1985.
2. G. W. Wang and W. H. Ku, “An analytical and computer aided model of the AlGaAs/GaAs high electron mobility transistor" IEEE Trans. Electron Devices, vol. ED-33, pp. 657-663, 1986.
3. H. Rohdin and P. Roblin, “A MODFET dc model with improved pinch off and saturation characteristics,” IEEE Trans. Electron Devices, vol. ED-33,pp. 664-672, 1986.
4. W. Hughes and C. Snowden, “Nonlinear charge control in AlGaAs/GaAs modulation doped FET’s,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1617-1625, 1987.
5. D. Delagebeaudeuf, P. Delescluse, P. Etienne, M. Laviron, J. Chaplart, and N. T. Linh, “Two dimensional electron gas M.E.S.F.E.T. structure,” Electron. Lett., vol. 16, pp. 667-668, 1980.
6. H. R. Yeager and R. W. Dutton, “Circuit simulation models for the high electron mobility transistor,” IEEE Trans. Electron Devices, vol. ED-33, pp. 682-692, 1986.
7. P. Roblin, S. C. Kang, and H. Morkoc, “Analytical solution of the velocity saturated MOSFET/MODFET wave equation and its application to the prediction of the microwave characteristics of MODFET’s,” IEEE Trans. Electron Devices, vol. 37, pp. 1608-1622, 1990.
8. A. B. Grebene and S. K. Ghandi, “General theory for pinched operation of the junction-gate FET,” Solid-State Electron., vol. 12, pp. 573-589, 1969.
9. F. Ponse, W. T. Masselink, and H. Morkoc, “Quasi-Fermi level bending in MODFET’s and its effect on FET transfer characteristics,” IEEE Trans. Electron Devices, vol. ED-32, p. 1017-1023, 1985.
10. J. Yoshida, “Classical versus quantum mechanical calculation of the electron distribution at the n-AlGaAs/GaAs heterointerface,” IEEE Trans. Electron Devices, vol. ED-33, pp. 154-156, 1986.
11. E. C. Paker, The Technology and Physics of Molecular Beam Epitaxy. New York: Plenum, 1987.