Photoluminescence investigation of a degenerate two-dimensional electron gas in GaN/AlGaN heterojunction

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 211-214

  Raymond, A ^a   Juillaguet, S ^a   Couzinet, B ^a   Mezouar, I El ^a   Kamal Saadi, A ^a   Khan, M Asif ^b   Chen, Q ^b   Yang, J W ^b  

^a UNIV MONTPELLIER   (France)

^b APA Optronics   (United States)

Author keywords

Photoluminescence; Quantum well; Two dimensional electron gas

Indexed keywords

EXCITONS; IMPURITIES; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; TWO-DIMENSIONAL ELECTRON GAS (DEG);

HETEROJUNCTIONS;

EID: 0041727138     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01864-8     Document Type: Article

References (21)

1. S. Strite and H. Morkoc, J. Vac. Sci. Technol., B10 (1992) 1237; H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns, J. Appl. Phys., 76 (1994) 1363.
2. S. Strite and H. Morkoc, J. Vac. Sci. Technol., B10 (1992) 1237; H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns, J. Appl. Phys., 76 (1994) 1363.
3. J.I. Pankove, Mater. Res. Soc. Symp. Proc., 97 (1987) 409.
4. S. Nakamura, M. Senoh and T. Mukai, Jpn. J. Appl. Phys., 32 (1993) L8.
5. M.A. Khan, J.N. Kuznia, D.T. Olson, M. Blasingame and A.R. Bhattarai, Appl. Phys. Lett., 63 (1993) 24550; M.A. Khan, M.S. Shur, J.N. Kuznia, Q. Chen, J. Burm and W. Schaff, Appl. Phys. Lett., 66 (1994) 1083; M.A. Khan, Q. Chen, R.A. Skogman and J.N. Kuznia, Appl. Phys. Lett., 66 (1995) 2046.
6. M.A. Khan, J.N. Kuznia, D.T. Olson, M. Blasingame and A.R. Bhattarai, Appl. Phys. Lett., 63 (1993) 24550; M.A. Khan, M.S. Shur, J.N. Kuznia, Q. Chen, J. Burm and W. Schaff, Appl. Phys. Lett., 66 (1994) 1083; M.A. Khan, Q. Chen, R.A. Skogman and J.N. Kuznia, Appl. Phys. Lett., 66 (1995) 2046.
7. M.A. Khan, J.N. Kuznia, D.T. Olson, M. Blasingame and A.R. Bhattarai, Appl. Phys. Lett., 63 (1993) 24550; M.A. Khan, M.S. Shur, J.N. Kuznia, Q. Chen, J. Burm and W. Schaff, Appl. Phys. Lett., 66 (1994) 1083; M.A. Khan, Q. Chen, R.A. Skogman and J.N. Kuznia, Appl. Phys. Lett., 66 (1995) 2046.
8. I. Akasaki, H. Amano, N. Koide, M. Kotabi and K. Monabe, Phys. B, 185 (1993) 428; and references there in.
9. M.A. Khan, J.N. Kuznia, J.M. Hove, M. Pan and J. Carter, Appl. Phys. Lett., 60 (1992) 3027.
10. A. Salvador, G. Liu, W. Kim, O. Aktas, A. Botcharev and H. Morkoc, Appl. Phys. Lett., 57 (1995) 3322.
11. W. Knap, H. Alause, J.M. Bluet, J. Camassel, J. Young, M. Asif Khan, Q. Chen, S. Huant and M. Shur, Solid Stat. Commun., (in press).
12. B. Beaumont and P. Gibart, in B. Gil and R. Aulombard (eds.), Int. Conf. Sem. Heteroepitaxy Montpellier July 1995, Growth Characterization and Devices Applications, World Scientific, Amsterdam, 1995, p. 258.
13. O. Briot, B. Gil and R. Aulombard, Phys. Rev. B, 52 (1995) R17028.
14. G.D. Mahan, Phys. Rev., 163 (1967) 612.
15. P. Nozieres and C.T. de Dominicis, Phys. Rev., 178 (1969) 1097.
16. T.A. Calcott, E.T. Arakawa and D.L. Ederer, Phys. Rev. B, 18 (1978) 6622.
17. M.S. Skolnick, J.M. Rorison, K.J. Nash, D.J. Mowbray, P.R. Tupster, S.J. Bars and A.D. Pitt, Phys. Rev. Lett., 58 (1987) 2130.
18. M. Drechsler, D.M. Hofmann, B.K. Meyer, T. Detchprohm, H. Amano and I. Akasaki, Jpn. J. Appl. Phys., 34 (1995) L1178.
19. P. Perlin, E. Litwin-Staszewska, B. Suchanek, W. Knap, J. Camassel, T. Suski, R. Piotrzkowski, I. Grzegory, S. Porowski, E. Kaminska and J.C. Chervin, App. Phys. Lett. (in press).
20. P. Hawrylak, Phys. Rev. B, 44 (1991) 6262.
21. J.F. Mueller, Phys. Rev. B, 42 (1990) 11189.