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Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 1113-1118

Donor-acceptor pair transitions in GaN

(7) Kornitzer, K a Mayer, M a Mundbrod, M a Thonke, K a Pelzmann, A a Kamp, M a Sauer, R a

a UNIVERSITY OF ULM (Germany)

Author keywords

Donor acceptor transitions; GaN; Photoluminescence

Indexed keywords

BINDING ENERGY; ELECTRON TRANSITIONS; ENERGY GAP; MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

DONOR ACCEPTOR PAIR TRANSITIONS; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 3743080550 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.258-263.1113 Document Type: Article

Times cited : (11)

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