Exciton dynamics in homoepitaxial GaN

Solid State Communications

Volumn 104, Issue 4, 1997, Pages 205-209

  Monemar, B ^a   Bergman, J P ^a   Ivanov, I G ^a   Baranowski, J M ^b   Pakula, K ^b   Grzegory, I ^c   Porowski, S ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF WARSAW   (Poland)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

A. Semiconductors; D. Optical properties; D. Recombination and trapping

Indexed keywords

CONCENTRATION (PROCESS); DISLOCATIONS (CRYSTALS); ELECTRON TRANSITIONS; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ACCEPTOR BOUND EXCITON (ABE); DONOR BOUND EXCITON (DBE); FREE EXCITON (FE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031248078     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00301-3     Document Type: Article

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