Structural and optical properties of AlGaN/GaN quantum-well structures grown by MOCVD on sapphire

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 769-774

  Niebuhr, R ^a   Bachem, K H ^a   Behr, D ^a   Hoffmann, C ^a   Kaufmann, U ^a   Lu, Y ^a   Santic, B ^a   Wagner, J ^a   Arlery, M ^a   Rouviere, J L ^a   Jurgensen, H ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHONONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INTERMETALLICS;

QUANTUM WELL EMISSION; SINGLE QUANTUM WELLS; WELL WIDTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030709137     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)