Materials design for the fabrication of low-resistivity p-type GaN using a codoping method

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 2 SUPPL. B, 1997, Pages

  Yamamoto, Tetsuya ^a,b   Katayama Yoshida, Hiroshi ^a,c  

^a OSAKA UNIVERSITY   (Japan)

^b ASAHI CHEMICAL INDUSTRY CO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Band structure calculations; Codoping method; Electronic structures; Electrostatic energy; GaN; p type GaN; Self compensation; Wide band gap

Indexed keywords

COMPOSITION EFFECTS; COMPUTATIONAL METHODS; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ENERGY GAP; OXYGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON;

AUGMENTED SPHERICAL WAVE METHOD; CODOPING METHOD; GALLIUM NITRIDE; LOCAL DENSITY APPROXIMATION (LDA);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031069368     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.L180     Document Type: Article

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