Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 573-578

  Walukiewicz, W ^a   Hsu, L ^a   Redwing, J M ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ELECTRON GAS; GALLIUM NITRIDE;

MULTILAYERS;

EID: 0030713476     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)