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Volumn 449, Issue , 1997, Pages 573-578
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Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON TRANSPORT PROPERTIES;
ELECTRONIC STRUCTURE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
NITRIDES;
PHONONS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
ELECTRON GAS;
GALLIUM NITRIDE;
MULTILAYERS;
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EID: 0030713476
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (11)
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