Growth and characterization of bulk Si-Ge single crystals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 A, 1996, Pages 5980-5985

  Honda, Tatsuya ^a   Suezawa, Masashi ^a   Sumino, Koji ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Band gap energy; Photoluminescence; Si Ge single crystal; Uniaxial stress

Indexed keywords

ELECTRON PROBE MICROANALYSIS (EPMA); EXCITONIC NO PHONON SPECTRUM; TRAVELING SOLVENT METHOD; UNIAXIAL STRESS;

CHEMICAL BONDS; COMPOSITION EFFECTS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; ENERGY GAP; EXCITONS; LIGHT MEASUREMENT; MICROANALYSIS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SILICON ALLOYS;

SINGLE CRYSTALS;

EID: 0030380930     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5980     Document Type: Article

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