Investigations of electron-beam and optical induced damage in high mobility sige heterostructures

Solid-State Electronics

Volumn 41, Issue 10, 1997, Pages 1509-1513

  Paul, D J ^a   Ryan, J M ^b   Kelly, P V ^c   Crean, G M ^c   Fernandez J M ^d   Pepper, M ^a   Broers, A N ^b   Joyce, B A ^d  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRON BEAMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON WAFERS; TEMPERATURE MEASUREMENT;

TWO DIMENSIONAL ELECTRON GASES (2DEG);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031245587     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00097-X     Document Type: Article

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