Manufacturability of heterojunction tunnel devices: Further progress

Semiconductor Science and Technology

Volumn 12, Issue 7, 1997, Pages 894-898

  Billen, K ^a   Wilkinson, V A ^a,b   Kelly, M J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b DRA Farnborough ^*  (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ASSYMMETRIC SPACER LAYER TUNNEL DIODE; DOUBLE CRYSTAL X RAY DIFFRACTION; MICROWAVE DETECTOR;

TUNNEL DIODES;

EID: 0031187417     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/7/021     Document Type: Article

References (4)

1. Eaves L and Kelly M J (eds) 1996 The current status of semiconductor tunnelling devices Phil. Trans. R. Soc. A 354 2289-467
2. Wilkinson V A, Kelly M J and Carr M 1997 Tunnel devices are not yet manufacturable Semicond. Sci. Technol. 12 91-9
3. Syme R T 1993 Microwave detection using GaAs/AlAs tunnel structures GEC J. Res. 11 12-23
4. Smith N S, Dowsett M G, McGregor B and Phillips P 1997 Rapid low energy depth profiling using SIMS Secondary Ion Mass Spectrometry, SIMS X ed A Benninghoven, B Hagenhoff and H W Werner (Chichester: Wiley) pp 363-6