Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator

Applied Physics Letters

Volumn 69, Issue 18, 1996, Pages 2704-2706

  Paul, D J ^a   Griffin, N ^a   Arnone, D D ^b   Pepper, M ^a,b   Emeleus, C J ^c   Phillips, P J ^c   Whall, T E ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOSHIBA CORPORATION   (Japan)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000842392     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117684     Document Type: Article

References (12)

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