Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 257-260

  Adesida, I ^a   Arafa, M ^a   Ismail, K ^b,c   Chu, J O ^c   Meyerson, B S ^c  

^a University of Illinois at Urbana Champaign   (United States)

^b CAIRO UNIVERSITY   (Egypt)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

HOLE TRANSPORT PROPERTY; MODULATION DOPED FIELD EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 0031072487     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00088-3     Document Type: Article

References (4)

1. K. Ismail, M. Arafa, K. L. Saenger, J. O. Chu, and B. S. Meyerson, "Extremely high electron mobility in Si/SiGe modulation-doped heterostructures," Appl. Phys. Lett., 66(9), 1995, pp. 1077-1079.
2. K. Ismail, J. O. Chu, and B. S. Meyerson, "High Hole Mobility in SiGe Alloys for Device Applications "Appl. Phys. Lett., 64 (23), 1994, pp. 3124-3126.
3. U. König, f. Schäffler, "P-type Ge channel MODFET's with high transconductance grown on Si substrates," IEEE Electron Dev. Lett., 14 (4), 1993, pp. 205-207.
4. M. Arafa, P. Fay, K Ismail, J. O. Chu, B. S. Meyerson, and I. Adesida," DC and RF Performance of 0.25 μm p-Type SiGe MODFET, " IEEE Electron Dev. Lett., 17 (9), 1996, pp. 449-451.