Electrical properties of two-dimensional electron gases grown on cleaned SiGe virtual substrates

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 181-185

  Paul, D J ^a   Ahmed, A ^a   Griffin, N ^a   Pepper, M ^a   Churchill, A C ^b   Robbins, D J ^b   Wallis, D J ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

Electrical properties; SiGe substrates; Two dimensional electron gases

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL CLEANING; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMAL EFFECTS;

SILICON GERMANIUM; TWO DIMENSIONAL ELECTRON GASES;

SEMICONDUCTOR GROWTH;

EID: 0032067972     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00470-2     Document Type: Article

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