Influence of poly-Si potential on profile distortion caused by charge accumulation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 SUPPL. B, 1996, Pages 2445-2449

  Ogino, Satoshi ^a   Fujiwara, Nobuo ^a   Miyatake, Hiroshi ^a   Yoneda, Masahiro ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Charge build up; Dry etching; Electron cyclotron resonance; Electron supply; Local side etch

Indexed keywords

CIRCULAR WAVEGUIDES; ELECTRIC CHARGE; ELECTRIC COILS; ELECTRODES; ELECTRON CYCLOTRON RESONANCE; ELECTRONS; IRRADIATION; MAGNETIC FIELDS; PLASMA ETCHING; SEMICONDUCTING SILICON; SOLENOIDS; SUBSTRATES;

CHARGE ACCUMULATION; ELECTRIC POTENTIAL; LOCAL SIDE ETCH; MAGNETIC FIELD GRADIENT; POLYSILICON ETCHING; POLYSILICON POTENTIAL; PROFILE DISTORTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030121611     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2445     Document Type: Article

References (9)

1. K. Nishioka, M. Yoneda, H. Morimoto and S. Uoya: IEEE Int. Electron Devices Meet. Tech. Dig. (1986) p. 308.
2. S. Matsuo and Y. Adachi: Jpn. J. Appl. Phys. 21 (1982) L4.
3. K. Suzuki, S. Okudaira, N. Sakudo and I. Kanomata: Jpn. J. Appl. Phys. 16 (1977) 1979.
4. T. Morimoto, C. Takahashi and S. Matsuo: Proc. 13th Symp. Dry Process (1991) p. 57.
5. N. Fujiwara, T. Maruyama, M. Yoneda, K. Tsukamoto and T. Banjo: Jpn. J. Appl. Phys. 33 (1994) 2164.
6. T. Nozawa, T. Kinoshita, T. Njshizuka and A. Nakaue: Ext. Abstr. 183rd Electrochemical Society Meet. (1993) Vol. 93-1, p. 356.
7. T. Nozawa, T. Kinoshita, T. Nishizuka, A. Narai, T. Inoue and A. Nakaue: Proc. 16th Symp. Dry Process (1994) p. 37.
8. D. Kimura, M. Sato, N. Takenaka, K. Miki, K. Nishizawa and S. Sakiyama: Ext. Abstr. 37th Spring Meet. Japan Society of Applied Physics and Related Societies (1990) 28p-ZF-2 [in Japanese].
9. S. Ogino, N. Fujiwara, H. Miyatake and M. Yoneda: Proc. 13th Symp. Plasma Processing (1995) IIIA14.