Aspect-ratio-dependent charging in high-density plasmas

Journal of Applied Physics

Volumn 82, Issue 2, 1997, Pages 566-571

  Hwang, Gyeong S ^a   Giapis, Konstantinos P ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000498204     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365616     Document Type: Article

References (17)

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13. G. S. Hwang and K. P. Giapis (unpublished).
14. The difference between the potentials of the edge line (low) and the neighboring line (high) steers the ions approaching the trench bottom towards the low equipotential. Since more ions impinge on the bottom surface near the sidewall foot of the edge line, a larger positive potential builds up at that location, resulting in an asymmetric potential distribution at the trench bottom. The symmetric potential distribution calculated by Kinoshita et al. (Ref. 6) is not physical and suggests that notching should occur at both sidewalls confining the edge trench, contrary to experimental evidence (Refs. 3 and 4).
15. This conjecture is based on maintaining the substrate potential close to 0 V.
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17. G. S. Hwang and K. P. Giapis, J. Appl. Phys. 81, 3433 (1997).