Simulation of current transients through ultrathin gate oxides during plasma etching

Applied Physics Letters

Volumn 71, Issue 14, 1997, Pages 1945-1947

  Hwang, Gyeong S ^a   Giapis, Konstantinos P ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3643069005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119989     Document Type: Article

References (13)

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5. Proceedings of the 1st International Symposium on Plasma Process-Induced Damage, Santa Clara, CA, 1996.
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9. Simplistic calculations of current injection through thin gate oxide during metal etch have been presented by T. Kinoshita, S. Krishnan, W. W. Dostalik, and J. P. McVittie, Proceedings of the 2nd International Symposium on Plasma Process-Induced Damage, Monterey, CA, 1997, p. 45. Since profile evolution during etching was not included, no true transients were observed.
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