Prediction of multiple-feature effects in plasma etching

Applied Physics Letters

Volumn 70, Issue 18, 1997, Pages 2377-2379

  Hwang, Gyeong S ^a   Giapis, Konstantinos P ^a  

^a California Institute of Technology ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000064261     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118878     Document Type: Article

References (9)

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2. N. Fujiwara, T. Maruyama, and M. Yoneda, Jpn. J. Appl. Phys. 34, 2095 (1995); 35, 2450 (1996).
3. N. Fujiwara, T. Maruyama, and M. Yoneda, Jpn. J. Appl. Phys. 34, 2095 (1995); 35, 2450 (1996).
4. T. Nozawa, T. Kinoshita, T. Nishizuka, A. Narai, T. Inoue, and A. Nakaue, Jpn. J. Appl. Phys. 34, 2107 (1995).
5. G. S. Hwang and K. P. Giapis, J. Vac. Sci. Technol. B 15, 70 (1997).
6. G. S. Hwang and K. P. Giapis (unpublished).
7. G. S. Hwang, C. M. Anderson, M. J. Gordon, T. A. Moore, T. K. Minton, and K. P. Giapis, Phys. Rev. Lett. 77, 3049 (1996).
8. No overetching time is stated because it is impossible to calibrate the reactive ion flux without an etching experiment of a structure similar to the simulated one.
9. The flux has been normalized with respect to the total ion flux entering each trench.