Ion mass effect in plasma-induced charging

Applied Physics Letters

Volumn 71, Issue 14, 1997, Pages 1942-1944

  Hwang, Gyeong S ^a   Giapis, Konstantinos P ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041392695     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119988     Document Type: Article

References (14)

1. D. L. Flamm, in Plasma Etching: An Introduction, edited by D. M. Manos and D. L. Flamm (Academic, New York, 1989).
2. D. B. Graves, M. J. Kushner, J. W. Gallagher, A. Garscadden, G. S. Oehrlein. and A. V. Phelps, Database Needs for Modeling and Simulation of Plasma Processing (National Academy Press, Washington, DC, 1996).
3. Gas flow rates and electron impact ionization cross-sections influence the relative abundance of ions in the plasma for a given electron temperature, pressure, and plasma density.
4. C. Steinbrüchel, Appl. Phys. Lett, 55, 1960 (1989).
5. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (Wiley, Inc., New York, 1994).
6. M. S. Barnes, J. C. Foster, and J. H. Keller, IEEE Trans. Plasma Sci. 19, 240 (1991).
7. T. Nozawa, T. Kinoshita, T. Nishizuka, A. Narai, T. Inoue, and A. Nakaue, Jpn. J. Appl. Phys., Part 1 34, 2107 (1995).
8. S. Tabara, Y. Kitayama, T. Hatakeyama, K. Katsuragi, and M. Tanage, Proceedings of the 2nd International Symposium on Plasma Process-Induced Damage, Monterey, CA, 1997, p. 233.
9. G. S. Hwang and K. P. Giapis, J. Appl. Phys. 82, 566 (1997).
10. The reduction in notching for the HCl/He plasma was attributed (Ref. 8) to "scavenging of excess Cl radicals by H radicals." It was not clarified why Cl-radical scavenging did not occur in the pure HCl plasma.
11. G. S. Hwang and K. P. Giapis. J. Appl. Phys. 81, 3433 (1997).
12. +.
13. G. S. Hwang and K. P. Giapis, J. Vac. Sci. Technol. B 15, 70 (1997).
14. +.