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Volumn , Issue , 1991, Pages 200-205
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Reliability of InGaAs HEMTs on GaAs substrates
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SUBSTRATES;
MEDIAN TIME BEFORE FAILURE;
TRANSISTORS, HIGH ELECTRON MOBILITY;
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EID: 0026138127
PISSN: 00999512
EISSN: None
Source Type: None
DOI: 10.1109/irps.1991.363234 Document Type: Conference Paper |
Times cited : (7)
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References (15)
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