Direct evidence for the dx center being a substitutional donor in algaas alloy system

Japanese Journal of Applied Physics

Volumn 24, Issue 2, 1985, Pages L143-L146

  Mizuta, Masashi ^a   Tachikawa, Masami ^a   Kukimoto, Hiroshi ^a   Minomura, Shigeru ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; SEMICONDUCTING GALLIUM ARSENIDE - PRESSURE EFFECTS;

ALUMINUM GALLIUM ARSENIDE; SUBSTITUTIONAL DONOR;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0022013506     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.24.L143     Document Type: Article

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