Gate Metallization “Sinking” into the Active Channel in Ti/W/Au Metallized Power MESFET's

IEEE Electron Device Letters

Volumn 7, Issue 3, 1986, Pages 185-187

  Canali, C ^a   Castaldo, F ^b   Fantini, F ^c   Ogliari, D ^c   Umena, L ^c   Zanoni, E ^d  

^a UNIVERSITY OF PADOVA   (Italy)

^b ITC IRST   (Italy)

^c Alcatel Italia SpA   (Italy)

^d UNIVERSITY OF BARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

LOGIC DEVICES - GATES;

GATE METALLIZATION; TITANIUM TUNGSTEN GOLD METALLIZED MESFET;

TRANSISTORS, FIELD EFFECT;

EID: 0022689458     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1986.26338     Document Type: Article

References (9)

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2. H. Fukui. “Determination of the basic device parameters of a GaAs MESFET,” Bell Syst. Tech. J., vol. 58, pp, 771–797, 1979.
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5. M. Benedek and B. S. Hewitt, “A comparative reliability study: Aluminum gate versus gold-base gate GaAs MESFET's,” in IEEE Int. Dev. Meeting (IEDM), 1978, pp. 385–388.
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7. C. Canali, F. Castaldo, F. Fantini, D. Ogliari, M. Vanzi, M. Zicolillo, and E. Zanoni, “Power GaAs MESFET's: Reliability aspects and failure mechanisms,” Microelectron. Relktbil., vol. 24, pp. 947–955, 1984.
8. J. E. Baker, R. J. Blattner, S. Nadel, C. A. Evans, and R. S. Nowicki, “Thermal annealing study of Au/Ti-W metallization on silicon,” Thin Solid Films, vol. 69, pp. 53–62, 1980.
9. C. Canali, G. Celotti, F. Fantini, and E. Zanoni, “Interdiffusion and compound formation in the c-Si/PtSi/(Ti-W)/A1 system,” Thin Solid Films, vol. 88, pp, 9–23, 1982.