A 1-W High-Efficiency Q-Band MMIC Power Amplifier

IEEE Microwave and Guided Wave Letters

Volumn 5, Issue 1, 1995, Pages 21-23

  Chi, James C L ^a   Lester, J A ^a   Hwang, Y ^a   Chow, P D ^a   Huang, M Y ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; GAIN MEASUREMENT; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MICROSTRIP LINES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM COMPOUNDS;

MEASURED LINEAR GAIN; POWER ADDED EFFICIENCY;

POWER AMPLIFIERS;

EID: 0029209617     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.382372     Document Type: Article

References (4)

1. W. Lam et al., “High-efficiency InP-based HEMT MMIC power amplifier for Q-band application,” IEEE Microwave and Guided Wave Lett., pp. 420-422, Nov. 1993.
2. T. H. Chen et al., “One watt Q-band class A pseudomorphic HEMT MMIC amplifier,” IEEE Microwave Theory and Technique Symp. Dig., San Diego, CA, 1994.
3. K. L. Tan et al., “Ultralow-noise W-band pseudomorphic InGaAs HEMTs,” IEEE Electron Device Lett., vol. 11, no. 7, pp. 303-305, 1990.
4. W. R. Curtice and M. Ettenberg, “A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers,” IEEE Trans. Microwave Theory Tech., vol. MTT-33, no. 12, Dec. 1985.