A 94-GHz Monolithic Balanced Power Amplifier Using 0.1-µm Gate GaAs-Based HEMT MMIC Production Process Technology

IEEE Microwave and Guided Wave Letters

Volumn 5, Issue 1, 1995, Pages 12-14

  Aust, M ^a   Wang, H ^a   Biedenbender, M ^a   Lai, R ^a   Streit, D C ^a   Liu, P H ^a   Dow, G S ^a   Allen, B R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK PARAMETERS; EQUIVALENT CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; MONOLITHIC INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

MATCHING STRUCTURES; MONOLITHIC BALANCED POWER AMPLIFIERS;

POWER AMPLIFIERS;

EID: 0029236788     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.382375     Document Type: Article

References (10)

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9. M. D. Biedenbender et al., “A 0.1 µm W-band HEMT production process for high yield and high performance low noise and power MMICs,” 16th Annual IEEE GaAs IC Symp. Dig., Philadelphia, PA, pp. 325-328, Oct. 1994.
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