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Volumn 44, Issue 5, 1997, Pages 751-760

Simulation study of micro-loading phenomena in silicon dioxide hole etching

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; LOADS (FORCES); MATHEMATICAL MODELS; SIMULATION; SIMULATORS; SURFACE PROPERTIES;

EID: 0031146692     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.568036     Document Type: Article
Times cited : (27)

References (30)
  • 10
    • 0024924511 scopus 로고    scopus 로고
    • Symp. VLSI Technol., 1989, pp. 45-46.
    • S. Tazawa, S. Matsuo, and K. Saito,Unified topography simulator for complex reaction including both deposition and etching, in Symp. VLSI Technol., 1989, pp. 45-46.
    • Tazawa, S.1    Matsuo, S.2    Saito, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.