Cold and low-energy ion etching (collie)

Japanese Journal of Applied Physics

Volumn 28, Issue 10 R, 1989, Pages 2147-2150

  Fujiwara, Nobuo ^a   Shibano, Teruo ^a   Nishioka, Kyusaku ^a   Kato, Tadao ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Electron cyclotron; Energy distribution; Ion temperature; Magnetic field; Plasma etching; Plasma instability; Resonance

Indexed keywords

INTEGRATED CIRCUITS, VLSI; MAGNETOHYDRODYNAMICS; PLASMAS - STABILITY;

ELECTRON CYCLOTRON RESONANCE; ION TEMPERATURE;

SEMICONDUCTING SILICON;

EID: 0024755085     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.2147     Document Type: Article

References (5)

1. S. Matsuo and Y. Adachi: Jpn. J. Appl. Phys. 21 (1982) L4.
2. K. Nishioka, M. Yoneda, H. Morimoto and S. Uoya: IEEE International Electron Devices Meeting Technical Digest 12.5 (1986) 308.
3. D. Takehara, R. Kawabata, H. Shibayama, T. Ashida and H. Shimizu: Proc. 10th Symp. Dry Process, Tokyo 1988, p. 15.
4. N. Fujiwara, K. Nishioka, T. Shibano, M. Yoneda and T. Kato: Proc. 10th Symp. Dry Process, Tokyo 1988, p. 9.
5. N. Fujiwara, K. Nishioka, T. Shibano, M. Yoneda and T. Kato: Digest of Papers 1st MicroProcess Conference, Tokyo 1988, p. 92.